n-channel power mosfet description thinkisemi 50n06 is three-terminal silicon device with current conduction capability of about 50a, fast switching speed. low on-state resistance, breakdown voltage rating of 60v, and max threshold voltages of 4 volt. it is mainly suitable electronic ballast, and low power switching mode power appliances. features * r ds(on) = 23m @ v gs = 10 v * ultra low gate charge ( typical 30 nc ) * low reverse transfer capacitance ( c rss = typical 80 pf ) * fast switching capability * 100% avalanche energy specified * improved dv/dt capability symbol 1.gate 3.source 2.drain to-251/ipak U55NF06 to-251/ipak p55nf06 to-220 d55nf06 to-252/dpak absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v t c = 25c 50 a continuous drain current t c = 100c i d 35 a pulsed drain current (note 2) i dm 200 a single pulsed (note 3) e as 480 mj avalanche energy repetitive (note 2) e ar 13 mj peak diode recovery dv/dt (note 4) dv/dt 7 v/ns to-220 120 w 90 power dissipation (t c =25c) to-252 p d 136 w junction temperature t j +150 c operation and storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. repetitive rating: pulse width limited by t j 3. l=0.38mh, i as =50a, v dd =25v, r g =20, starting t j =25c 4. i sd 50a, di/dt 300a/s, v dd bv dss , starting t j =25c application networking dc-dc power system auotmobile convert system power supply etc.. to-251 w 2 3 2 3 1 2 3 1 to-220/to-220f f55nf06 to-220f to-252/dpak 1 ? 55nf06 pb free plating product 55nf06 n-channel power mosfet transistor pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/6 50 ampere 60 volt free datasheet http:///
thermal data parameter symbol rating unit to-220 62 c/w to-251 junction to ambient to-252 ja 100 c/w to-220 1.24 c/w 1.28 junction to case to-252 jc 1.1 c/w electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 10 a forward v gs = 20v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv ? dss / ? t j i d = 250 a, referenced to 25c 0.07 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10 v, i d = 25 a 18 23 m dynamic characteristics input capacitance c iss 900 1220 pf output capacitance c oss 430 550 pf reverse transfer capacitance c rss v gs = 0 v, v ds = 25 v f = 1mhz 80 100 pf electrical characteristics(cont.) switching characteristics turn-on delay time t d(on) 40 60 ns turn-on rise time t r 100 200 ns turn-off delay time t d(off) 90 180 ns turn-off fall time t f v dd = 30v, i d =25 a, r g = 50 (note 1, 2) 80 160 ns total gate charge q g 30 40 nc gate-source charge q gs 9.6 nc gate-drain charge q gd v ds = 48v, v gs = 10 v i d = 50a (note 1, 2) 10 nc drain-source diode characteristics and 3 maximum ratings drain-source diode forward voltage v sd i s = 50a, v gs = 0 v 1.5 v maximum continuous drain-source diode forward current i s 50 a maximum pulsed drain-source diode forward current i sm 200 a reverse recovery time t rr 54 ns reverse recovery charge q rr i s = 50a, v gs = 0 v di f / dt = 100 a/s 81 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature c/w 62 c/w to-251 ? 55nf06 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/6 free datasheet http:///
test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recover y dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms ? 55nf06 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/6 free datasheet http:///
test circuits and waveforms (cont.) fig. 2a switching test circuit 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r g 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit 3 3 3 fig. 4b unclamped inductive switching waveforms ? 55nf06 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 4/6 free datasheet http:///
typical characteristics drain current, i d (a) drain current, i d (a) 0.0 0 drain current, i d (a) 40 80 200 100 140 0.5 1.0 1.5 2.0 2.5 on-resistance variation vs. drain current and gate voltage 10 2 10 1 10 0 0.2 source-drain voltage, v sd (v) on state current vs. allowable case temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 20 60 120 160180 v gs =20v *note: 1. v gs =0v 2. 250s test 25c 150c v gs =10v ? 55nf06 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 5/6 free datasheet http:///
typical characteristics(cont.) -100 drain-source breakdown voltage, bv dss (normalized) junction temperature, t j (c) -50 50 200 *note: 1. v gs =0v 2. i d =250a 100 150 1.2 breakdown voltage variation vs. junction temperature 0 1.1 1.0 0.9 0.8 drain-source on-resistance, r ds(on) , (normalized) -50 50 100 150 3.0 on-resistance variation vs. junction temperature 0 2.0 1.0 0.5 0.0 1.5 2.5 junction temperature, t j (c) *note: 1. v gs =10v 2. i d =25a 10 1 10 0 10 -1 drain-source voltage, v ds (v) drain current , i d, (a) maximum safe operating 10 -1 10 3 drain current, i d (a) case temperature, t c (c) 75 100 150 50 maximum drain current vs. case temperature 0 125 50 25 10 20 30 40 10 0 10 1 10 2 operation in this area by r ds (on) *note: 1. t c =25c 2. t j =150c 3. single pulse 100s 1ms 10ms 10ms 10 2 thermal response, z jc (t) ? 55nf06 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 6/6 free datasheet http:///
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